2SK3633 2006-11-10 1 toshiba field effect transistor silicon n-channel mos type ( ?mos iv) 2SK3633 switching regulator applications ? low drain-source on-resistance: r ds (on) = 1.35 (typ.) ? high forward transfer admittance: |y fs | = 5.2 s (typ.) ? low leakage current: i dss = 100 a (v ds = 640 v) ? enhancement mode: v th = 2.0~4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 800 v drain-gate voltage (r gs = 20 k ) v dgr 800 v gate-source voltage v gss 30 v dc (note 1) i d 7 drain current pulse (t = 1 ms) (note 1) i dp 21 a drain power dissipation (tc = 25c) p d 150 w single-pulse avalanche energy (note 2) e as 420 mj avalanche current i ar 7 a repetitive avalanche energy (note 3) e ar 15 mj channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristic symbol max unit thermal resistance, channel to case r th (ch-c) 0.833 c/w thermal resistance, channel to ambient r th (ch-a) 50 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 15.7 mh, i ar = 7 a, r g = 25 note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita sc-65 toshiba 2-16c1b weight: 4.6 g (typ.)
2SK3633 2006-11-10 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i d = 10 a, v gs = 0 v 30 ? ? v drain cutoff current i dss v ds = 640 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 800 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 3.5 a ? 1.35 1.7 forward transfer admittance ? y fs ? v ds = 20 v, i d = 3.5 a 2.5 5.2 ? s input capacitance c iss ? 1500 ? reverse transfer capacitance c rss ? 25 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 140 ? pf rise time t r ? 35 ? turn-on time t on ? 80 ? fall time t f ? 50 ? switching time turn-off time t off ? 220 ? ns total gate charge q g ? 35 ? gate-source charge q gs ? 22 ? gate-drain charge q gd v dd ? 400 v, v gs = 10 v, i d = 7 a ? 13 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 7 a pulse drain reverse current (note 1) i drp ? ? ? 21 a forward voltage (diode) v dsf i dr = 7 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 1200 ? ns reverse recovery charge q rr i dr = 7 a, v gs = 0 v, di dr /dt = 100 a/ s ? 11.5 ? c marking r l = 114 0 v 10 v v gs v dd ? 400 v i d = 3.5 a v out 50 duty < = 1%, t w = 10 s k3633 toshiba lot no. a line indicates a lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
2SK3633 2006-11-10 3 i d ? v ds i d ? v ds i d ? v gs v ds ? v gs |y fs | ? i d r ds (on) ? i d 20 30 40 50 0 4 6 8 10 2 010 8 12 16 20 0 8 12 16 20 4 04 0.01 0.1 10 0.1 1 0 1 2 3 4 5 4 6 8 10 0 2 4 8 0 8 12 16 4 0 2 10 10 6 1 v gs = 4.5 v 5 5.25 5.5 8 10 6 common source tc = 25c pulse test common source v ds = 20 v pulse test tc = ? 55c 100 25 common source tc = 25c pulse test i d = 7 a 1.5 3.5 common source tc = 25c pulse test v gs = 10 v v gs = 4.5 v 5 5.25 common source tc = 25c pulse test 8 10 5.75 5.5 6 common source v ds = 20 v pulse test 1 100 0.1 1 100 0. 1 10 10 tc = ? 55c 25 100 drain ? source voltage v ds (v) drain ? source voltage v ds (v) gate ? source voltage v gs (v) gate ? source voltage v gs (v) drain current i d (a) drain current i d (a) drain current i d (a) drain current i d (a) forward transfer admittance ? y fs ? (s) drain current i d (a) drain ? source voltage v ds (v) drain ? source on-resistance r ds (on) ( )
2SK3633 2006-11-10 4 r ds (on) ? tc 0 5 1 3 2 ? 40 ? 80 160 0 40 120 80 10 0 400 300 200 0 30 40 20 4 50 12 0 8 4 100 60 p d ? tc 500 20 16 i d = 7a 3 1.5 common source v gs = 10 v pulse test 10 0.1 100 1000 1 10 10000 100 common source v gs = 0 v f = 1 mhz tc = 25c c iss c oss c rss v th ? tc 0 ? 80 0 40 80 120 160 ? 40 1 2 3 4 5 common source v ds = 10 v i d = 1 ma pulse test v dd = 100 v 400v 2 00 v v ds v gs common source i d = 7 a tc = 25c pulse test i dr ? v ds 0.4 0 0.8 1.2 1.6 0.1 1 100 10 common source tc = 25c pulse test v gs = ? 1 v 1 10 0 3 200 50 100 150 0 0 120 40 200 160 80 drain ? source on-resistance r ds (on) ( ) capacitance c (pf) drain power dissipation p d (w) drain reverse current i dr (a) gate threshold voltage v th (v) drain ? source voltage v ds (v) case temperature tc (c) drain ? source voltage v ds (v) drain ? source voltage v ds (v) case temperature tc (c) case temperature tc (c) total gate charge q g (nc) c ? v ds gate ? source voltage v gs (v) dynamic input/output characteristics
2SK3633 2006-11-10 5 ?15 v 15 v test circuit waveform i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 15.7 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as e as ? t ch 1 100 10 0.01 0.1 10 100 1000 10000 0 100 200 300 500 400 25 50 75 100 125 150 safe operating area drain current i d (a) drain-source voltage v ds (v) avalanche energy e as (mj) channel temperature (initial) t ch (c) * single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. v dss max 100 s* 1 ms * i d ma x ( pulsed ) * i d max (continuous) * dc operation tc = 25c 1
2SK3633 2006-11-10 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
|
